GATE 2014 Aerospace Engineering (AE) Question Paper with Answer Key PDFs (February 2- Forenoon Session)

GATE 2014 Aerospace Engineering (AE) Question Paper and Answer Key PDFs are available for download.GATE 2014 AE paper was conducted by IISC, Bangalore on February 2nd, 2014 in the Forenoon Session. Though the medium was online but the overall difficulty level of GATE AE was rated medium to difficult.GATE Question Paper consists of 55 multiple choice questions (MCQs) and 10 Numerical Answer Type (NATs). GATE AE Paper had two sections- General Aptitude for 15% of the total marks and 85% for the remaining discipline.

GATE 2014 Aerospace Engineering (AE) Question Paper with Answer Key PDFs (February 2- Forenoon Session)

GATE 2014 Aerospace Engineering(AE) Question Paper GATE 2014 Aerospace Engineering (AE) Answer Key
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GATE 2014 AE Answer Key Details

Section Question No. Answer Section Question No. Answer
GA 1 A AE 24 B
GA 2 B AE 25 1.2 to 1.25
GA 3 D AE 26 A
GA 4 C AE 27 C
GA 5 1300 to 1300 AE 28 D
GA 6 D AE 29 A
GA 7 B AE 30 B
GA 8 180 to 180 AE 31 ‐5.01 to ‐4.99
GA 9 D AE 32 C
GA 10 B AE 33 1705 to 1720
AE 1 C AE 34 B
AE 2 B AE 35 C
AE 3 C AE 36 C
AE 4 A AE 37 0.99 to 1.01
AE 5 D AE 38 0.12 to 0.13
AE 6 A AE 39 A
AE 7 D AE 40 B
AE 8 B AE 41 D
AE 9 D AE 42 D
AE 10 D AE 43 B
AE 11 A AE 44 D
AE 12 B AE 45 1880 to 1881
AE 13 B AE 46 1.10 to 1.25
AE 14 2.95 to 3.05 AE 47 74 to 76
AE 15 C AE 48 6050 to 6250
AE 16 D AE 49 D
AE 17 B AE 50 C
AE 18 B AE 51 D
AE 19 C AE 52 18 to 20
AE 20 D AE 53 B
AE 21 0.45 to 0.55 AE 54 C
AE 22 D AE 55 B
AE 23 D

GATE 2014 Aerospace Engineering (AE) Detailed Paper Analysis

  • GATE 2014 AE Question Paper, had 10 General Aptitude questions.
  • In the Core Discipline-Aerospace Engineering, a total of 55 questions were asked. The Details regarding GATE 2014 AE, GA, and Core Discipline Section in the question paper are given below:
Type of Questions General Aptitude Core Discipline
Number of Questions Marks Number of Questions Marks
No. of 1-mark MCQs 5 5 20 20
No. of 2 marks MCQs 4 8 28 56
No. of 1-mark NATs - - 5 5
No. of 2 marks NATs 1 2 2 4

GATE Previous Year Question Papers:

Other PG Exam Question Papers:

GATE Questions

  • 1.

    In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.


     

      • a

      • b


    • 2.
      For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

        • $\left[I_{2}\right]=\left[H_{2}\right], \left[I_{2}\right] > \left[HI\right]$
        • $({\frac{x^3}{9}})$
        • \(\left[I_{2}\right]>\left[H_{2}\right], \left[I_{2}\right] = \left[HI\right]\)

        • $\omega\propto\,n^{\frac{1}{3}}$

      • 3.

        sample text

          • dfb

          • dfg


        • 4.
          Question Text

            • A
            • B

          • 5.

            new

              • new one

              • new one two


            • 6.

              Write a balanced equation for the reaction of molecular nitrogen (N2) and oxygen (O2) to form dinitrogen pentoxide. \((f(x)=x^2)\)

                • N2 + O2 → N2O5 (unbalanced equation)
                • 2N2 + 5O2 → 2N2O5
                • option 3

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