GATE 2015 MT Question Papers with Answer Key PDFs (February 1- Afternoon Session)

GATE 2015 Metallurgical Engineering (MT) Question Paper and Answer Key PDFs are available for download. GATE 2015 Metallurgical Engineering Question Paper was conducted by IIT Kanpur on February 1, 2015 in the afternoon session. GATE 2015 MT Question Paper consisted of a total of 65 Questions out of which General Aptitude Section comprised of 10 Questions and Metallurgical Engineering Section consisted of 55 questions. The overall difficulty level of GATE 2015 Metallurgical Engineering Question Paper was rated moderate.

GATE 2015 Metallurgical Engineering (MT) Question Papers with Answer Key PDFs (February 1-Afternoon Session)

GATE 2015 Metallurgical Engineering (MT) Question Paper	GATE 2015 Metallurgical Engineering (MT) Answer Key
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GATE 2015 MT Answer Key Details

Question No.	Answer	Question No.	Answer
1	A	34	C
2	C	35	B
3	B	36	-1
4	B	37	4
5	B	38	1
6	C	39	D
7	C	40	1
8	280	41	D
9	C	42	2.1 to 2.3
10	B	43	1400 to 1450
11	3.1 to 3.33	44	C
12	A	45	B
13	D	46	2.9 to 3.1
14	C	47	29.5 to 30.0
15	B	48	0.5
16	A	49	-1600 to -1500
17	C	50	C
18	A	51	1
19	A	52	A
20	D	53	B
21	B	54	0.09 to 0.11
22	B	55	0.9 to 1.1
23	D	56	B
24	B	57	0.39 to 0.41
25	D	58	B
26	A	59	10
27	C	60	D
28	B	61	C
29	B	62	C
30	C	63	3
31	D	64	C
32	490 to 510	65	100
33	D

GATE 2015 Metallurgical Engineering (MT) Detailed Paper Analysis

Metallurgical Engineering paper had seven sections: Engineering Mathematics, Core Subject and General Aptitude.
The paper had two types of questions: Multiple Choice Questions (MCQs) and Numerical Answer Type (NATs).
In Multiple Choice Questions (MCQs), there will be one-third negative marking for wrong answer in one mark MCQs.
There will be two-third negative marking for wrong answer in two marks MCQs.
In Numerical Answer Type (NATs), there will be no negative marking for wrong answer.

Type of Questions	General Aptitude		Core Discipline
Type of Questions	Number of Questions	Marks	Number of Questions	Marksh
No. of 1 mark MCQs	5	5	23	23
No. of 2 marks MCQs	5	10	14	28
No. of 1 mark NATs	-	-	2	2
No. of 2 marks NATs	-	-	16	32

GATE Previous Year Question Papers:

Solving previous year's GATE Metallurgical Engineering Question Papers is important since it gives you an idea of how the GATE sets the paper. GATE Metallurgical Engineering Previous Year Papers can help you comprehend the changes that have occurred in this test in the past.

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1.
M. Hamel is introduced as a ruler-wielding teacher. This demonstrates that:

he is adamant.
he is a hard taskmaster.

View Solution

2.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

Square
Rectangle

View Solution

3.
test

test
test

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4.
new

new one
new one two

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5.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

N₂ + O₂ → N₂O₅ (unbalanced equation)
2N₂ + 5O₂ → 2N₂O₅
option 3

View Solution

6.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

View Solution

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GATE 2015 MT Question Papers with Answer Key PDFs (February 1- Afternoon Session)

GATE 2015 Metallurgical Engineering (MT) Question Papers with Answer Key PDFs (February 1-Afternoon Session)

GATE 2015 MT Answer Key Details

GATE 2015 Metallurgical Engineering (MT) Detailed Paper Analysis

GATE Previous Year Question Papers:

Other PG Exam Question Papers:

GATE Questions

1.
M. Hamel is introduced as a ruler-wielding teacher. This demonstrates that:

2.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

3.
test

4.
new

5.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

6.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

Fees Structure

Structure based on different categories

Comments

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GATE 2015 Metallurgical Engineering (MT) Question Papers with Answer Key PDFs (February 1-Afternoon Session)

GATE 2015 MT Answer Key Details

GATE 2015 Metallurgical Engineering (MT) Detailed Paper Analysis

GATE Previous Year Question Papers:

Other PG Exam Question Papers:

GATE Questions

1.M. Hamel is introduced as a ruler-wielding teacher. This demonstrates that:

2.The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

3.test

4.new

5.Write a balanced equation for the reaction of molecular nitrogen (N2) and oxygen (O2) to form dinitrogen pentoxide. \((f(x)=x^2)\)

6.In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

Fees Structure

Structure based on different categories

Comments

SUBSCRIBE TO OUR NEWS LETTER

1.
M. Hamel is introduced as a ruler-wielding teacher. This demonstrates that:

2.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

3.
test

4.
new

5.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

6.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.