GATE 2020 AR Question Paper with Answer Key PDFs Feb 2 Forenoon Session

GATE 2020 AR Question Paper with Answer Key PDFs is now available. GATE 2020 AR (Architecture and Planning) was held on February 2, 2020 in the forenoon session (9:30 AM to 12:30 PM). GATE 2020 AR paper was conducted in online mode as computer-based test. The overall difficulty level of GATE 2020 AR was found to be moderate to difficult.

Candidates who are interested in taking GATE in the future can download GATE 2020 AR question paper with answer keys in PDF format. The question paper with answer key will give a candidate a better sense of the types of questions that are asked.

GATE 2020 AR Question Paper with Answer Key PDFs - Forenoon Session

GATE 2020 AR Question Paper	GATE 2020 AR Answer Key
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GATE AR Syllabus	GATE Exam Pattern

GATE AR 2020 Exam Pattern Marking Scheme

PARTICULARS	DETAILS
Section	General Aptitude (GA) Candidate Selected Subject
Type of Questions	Multiple Choice Questions (MCQs) Multiple Select Questions (MSQs) Numerical Answer Type (NAT) Questions
Distribution of Questions in AR	Subject Concerned - 85 Marks General Aptitude - 15 Marks
Total Marks	100 Marks
Marking Scheme	All of the questions will be of 1 or 2 marks
Negative Marking	MCQs - 1 mark for each correct answer and 1/3 mark will be deducted for every wrong answer. MCQs - 2 marks for each correct answer and 2/3 mark will be deducted for every incorrect response. There is no negative marking for Numerical Answer Type (NAT) questions

GATE Paper Code	General Aptitude (GA) Marks	Subject Marks	Total Marks	Total Time (Minutes)
AR [Part A + Part B (B1: Architecture or B2: Planning)]	15	60 + 25	100	180

Also Check:

GATE AR Previous Year Question Papers	GATE Paper Analysis

GATE AR 2020 Cut off

The following table consists of GATE 2020 Cut-off scores for Architecture and Planning subject;

Category	GATE 2020 AR Cut off
General/EWS	34.8
OBC-NCL	31.3
SC/ST/PwD	23.2

GATE Previous Year Question Papers:

GATE 2022 Question Papers	GATE 2021 Question Papers	GATE 2020 Question Papers
GATE 2019 Question Papers	GATE 2018 Question Papers	GATE 2017 Question Papers

1.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

12 sq.units
24 sq.units

View Solution

2.
$(1+i)^{2}\div i(2i-1)$

View Solution

3.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

View Solution

4.
test

test
test

View Solution

5.
Question Text

View Solution

6.
For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

$\left[I_{2}\right]=\left[H_{2}\right], \left[I_{2}\right] > \left[HI\right]$
$({\frac{x^3}{9}})$
$\left[I_{2}\right]>\left[H_{2}\right], \left[I_{2}\right] = \left[HI\right]$
$\omega\propto\,n^{\frac{1}{3}}$

View Solution

Fees Structure

Structure based on different categories

Categories	State
General	1400
Women	900
sc	900
pwd	900

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GATE 2020 AR Question Paper with Answer Key PDFs Feb 2 Forenoon Session

GATE 2020 AR Question Paper with Answer Key PDFs - Forenoon Session

GATE AR 2020 Exam Pattern Marking Scheme

GATE AR 2020 Cut off

GATE Previous Year Question Papers:

Other PG Exam Question Papers:

GATE Questions

1.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

2.
\((1+i)^{2}\div i(2i-1)\)

3.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

4.
test

5.
Question Text

6.
For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

Fees Structure

Structure based on different categories

Comments

SUBSCRIBE TO OUR NEWS LETTER

GATE 2020 AR Question Paper with Answer Key PDFs - Forenoon Session

GATE AR 2020 Exam Pattern Marking Scheme

GATE AR 2020 Cut off

GATE Previous Year Question Papers:

Other PG Exam Question Papers:

GATE Questions

1.The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

2.\((1+i)^{2}\div i(2i-1)\)

3.In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

4.test

5.Question Text

6.For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

Fees Structure

Structure based on different categories

Comments

SUBSCRIBE TO OUR NEWS LETTER

1.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

2.
\((1+i)^{2}\div i(2i-1)\)

3.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

4.
test

5.
Question Text

6.
For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium