GATE 2021 EE Question Paper with Answer Key (Feb 7- Forenoon Session)

Candidates can download the GATE 2021 EE Question Paper with Answer Key PDFs here. GATE 2021 EE paper was conducted by IIT Bombay on February 7th, 2021 in the Forenoon Session (9:30 AM to 12:30 PM). The overall difficulty level of the exam stood at moderate to tough. Questions from the Signal System were the easiest to attempt. General Aptitude had a weightage of around 15% and was easy to attempt.

GATE 2021 EE Question Paper with Answer Key PDFs- Feb 7 (Forenoon Session)

GATE 2021 EE Question Paper	GATE 2021 EE Answer Key
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GATE 2021 EE: Paper Analysis

This year, the conducting body (IIT Bombay) introduced MSQs (Multiple Select Questions) in the exam. Such questions had more than one answer correct. To get rewarded with marks, a candidate must choose all the correct answers
The question paper consisted of 65 questions carrying 100 marks.
There was no negative marking in MSQs or NATs.
Only wrong attempted MCQs had to face negative marking. ⅓ and ⅔ would be reduced for questions carried 1 and 2 marks respectively.
GATE 2021 EE Cut off stood at 39.6 for General, 35.6 for OBC, and 26.4 for SC/ST candidates

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GATE Syllabus for EE	GATE Exam Pattern for EE

GATE 2021 EE: Topic Wise Weightage

Sections	Topic Wise Weightage
General Aptitude	15%
Engineering Mathematics	12%
Digital Circuits	3%
Control Systems	5%
Signal and Systems	9%
Network Theory	11%
Analog Electronics	10%
Power Electronics	6%
Electromagnetic Theory	6%
Electrical Machines	8%
Power Systems	11%
Measurement	4%
Total Weightage	100%

GATE 2021 EE: Topic Wise Question Frequency

Sections	1 Mark Question	2 Marks Questions
General Aptitude	5	5
Power System	4	4
Engineering Mathematics	4	4
Signal System	2	1
EMFT	2	2
Electrical Machines	2	3
Analog Electronics	2	2
Digital Electronics	1	1
Control Systems	2	3
Electrical Circuits	3	4
Power Electronics	1	4
Electrical Measurement	2	0
Total	30	35

Also Check:

GATE Previous Year Question Papers for EE	GATE Paper Analysis

GATE Previous Year Question Papers:

GATE 2022 Question Papers	GATE 2021 Question Papers	GATE 2020 Question Papers
GATE 2019 Question Papers	GATE 2018 Question Papers	GATE 2017 Question Papers

1.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

12 sq.units
24 sq.units

View Solution

2.
M. Hamel is introduced as a ruler-wielding teacher. This demonstrates that:

he is adamant.
he is a hard taskmaster.

View Solution

3.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

N₂ + O₂ → N₂O₅ (unbalanced equation)
2N₂ + 5O₂ → 2N₂O₅
option 3

View Solution

4.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

Square
Rectangle

View Solution

5.
Franz looked for opportunities to skip school to do what?

water the plants
collect birds eggs

View Solution

6.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

View Solution

Fees Structure

Structure based on different categories

Categories	State
General	1400
Women	900
sc	900
pwd	900

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GATE 2021 EE Question Paper with Answer Key (Feb 7- Forenoon Session)

GATE 2021 EE Question Paper with Answer Key PDFs- Feb 7 (Forenoon Session)

GATE 2021 EE: Paper Analysis

GATE 2021 EE: Topic Wise Weightage

GATE 2021 EE: Topic Wise Question Frequency

GATE Previous Year Question Papers:

Other PG Exam Question Papers:

GATE Questions

1.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

2.
M. Hamel is introduced as a ruler-wielding teacher. This demonstrates that:

3.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

4.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

5.
Franz looked for opportunities to skip school to do what?

6.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

Fees Structure

Structure based on different categories

Comments

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GATE 2021 EE Question Paper with Answer Key PDFs- Feb 7 (Forenoon Session)

GATE 2021 EE: Paper Analysis

GATE 2021 EE: Topic Wise Weightage

GATE 2021 EE: Topic Wise Question Frequency

GATE Previous Year Question Papers:

Other PG Exam Question Papers:

GATE Questions

1.The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

2.M. Hamel is introduced as a ruler-wielding teacher. This demonstrates that:

3.Write a balanced equation for the reaction of molecular nitrogen (N2) and oxygen (O2) to form dinitrogen pentoxide. \((f(x)=x^2)\)

4.The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

5.Franz looked for opportunities to skip school to do what?

6.In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

Fees Structure

Structure based on different categories

Comments

SUBSCRIBE TO OUR NEWS LETTER

1.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

2.
M. Hamel is introduced as a ruler-wielding teacher. This demonstrates that:

3.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

4.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

5.
Franz looked for opportunities to skip school to do what?

6.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.